Description: Fundamentals of Silicon Carbide Technology : Growth, Characterization, Devices and Applications, Hardcover by Kimoto, Tsunenobu; Cooper, James A., ISBN 1118313526, ISBN-13 9781118313527, Brand New, Free shipping in the US Electrical engineers Kimoto and Cooper describe silicon carbide as a wide-bandgap semiconductor with superior physical and electrical properties that can serve as the basis for the high-voltage, low-loss power electronics of the future. Silicon power devices--the workhorse for decades--are now approaching performance limits imposed by the fundamental material properties of silicon, they say, and must be replaced with more robust semiconductors. Their topics are physical properties of silicon carbide, bulk growth, epitaxial growth, characterization techniques and defects, device processing, unipolar and bipolar power diodes, unipolar and bipolar power switching devices, optimizing and comparing power devices, applying silicon carbide devices in power systems, and specialized silicon carbide devices and applications. Annotation ©2015 Ringgold, Inc., Portland, OR ()
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Book Title: Fundamentals of Silicon Carbide Technology : Growth, Characteriza
Number of Pages: 400 Pages
Language: English
Publication Name: Fundamentals of Silicon Carbide Technology : Growth, Characterization, Devices and Applications
Publisher: Wiley & Sons, Incorporated, John
Subject: Electronics / Semiconductors, Chemistry / General
Item Height: 1.3 in
Publication Year: 2014
Item Weight: 39.3 Oz
Type: Textbook
Item Length: 9.7 in
Author: James A. Cooper, Tsunenobu Kimoto
Subject Area: Technology & Engineering, Science
Series: IEEE Press Ser.
Item Width: 6.6 in
Format: Hardcover
