Description: Description:Advanced Process TechnologyUltra Low On-ResistanceDynamic dv/dt Rating175°C Operating TemperatureFast SwitchingFully Avalanche RatedQty:20pcs/40pcs optional Specification:Type of Transistor: MOSFETType of Control Channel: N -ChannelMaximum Power Dissipation (Pd): 200 WMaximum Drain-Source Voltage 'Vds': 55 VMaximum Gate-Source Voltage 'Vgs': 20 VMaximum Gate-Threshold Voltage 'Vgs(th)': 4 VMaximum Drain Current 'Id': 110 AMaximum Junction Temperature (Tj): 175 °CTotal Gate Charge (Qg): 146(max) nCRise Time (tr): 101 nSDrain-Source Capacitance (Cd): 781 pFMaximum Drain-Source On-State Resistance (Rds): 0.008 Ohm Package Included:20/40 x IRF3205 IR MOSFET N-CHANNEL HEXFET Power Transistor On Aug 11, 2024 at 21:09:10 PDT, seller added the following information:
Price: 11.89 USD
Location: Bordentown, New Jersey
End Time: 2024-09-07T11:29:09.000Z
Shipping Cost: 0 USD
Product Images
Item Specifics
Restocking Fee: No
Return shipping will be paid by: Seller
All returns accepted: Returns Accepted
Item must be returned within: 30 Days
Refund will be given as: Money Back
Bundle Description: 20/40pcs IRF3205 MOSFET N-CHANNEL TO-220 Transistor
Function: Power Transistor
Transistor Type: MOSFET
Model: IRF3205
Type of Control Channel: N -Channel
Rise Time (tr): 101 nS
Feature: Ultra Low On-Resistance, Dynamic dv/dt Rating, Fast Switching
Brand: Unbranded
Number of Pins: 3 Pins
Type: N-Channel Enhancement Mode MOSFET
Transistor Category: Power Transistor
MPN: IRF3205
Maximum Operating Temperature: 175 °C (347 °F)
Mounting Style: Through-Hole
Series: IRF3205
Maximum DC Collector Current: 110A
Packaging: Tube
Maximum Base-Emitter Voltage: 55V
Maximum Power Dissipation: 200W
Available Variations
Color: 20pcs
Price: 11.89 USD
Available Quantity: 5
Quantity Sold: 4
Color: 40pcs
Price: 17.99 USD
Available Quantity: 3
Quantity Sold: 2
